Manufacturer Part Number
DSS4240T-7
Manufacturer
Diodes Incorporated
Introduction
High-performance, high-voltage, high-current NPN bipolar junction transistor (BJT)
Product Features and Performance
Capable of operating at up to 40V collector-emitter voltage
Supports up to 2A collector current
High DC current gain of 300 or more at 1A collector current
Fast transition frequency of 100MHz
Low collector-emitter saturation voltage of 320mV at 2A collector current
Product Advantages
Robust and reliable performance
Suitable for high-power, high-speed switching applications
Compact surface mount package
Key Technical Parameters
Operating temperature range: -55°C to 150°C
Maximum power dissipation: 600mW
Collector-emitter breakdown voltage: 40V
Collector current: 2A maximum
Collector cutoff current: 100nA maximum
Quality and Safety Features
RoHS3 compliant
Packaged in a space-saving SOT-23-3 surface mount package
Compatibility
Can be used as a replacement or upgrade for various high-power, high-voltage bipolar transistor applications
Application Areas
Switching power supplies
Motor controls
Audio amplifiers
Industrial electronics
Telecommunications equipment
Product Lifecycle
This product is an active and ongoing part of Diodes Incorporated's product lineup
Replacement or upgraded models may become available in the future as technology advances
Key Reasons to Choose This Product
Excellent performance characteristics for high-power, high-voltage applications
Compact and space-saving surface mount package
Reliable and robust design for industrial and commercial use
RoHS3 compliance for environmental compatibility
Proven track record and ongoing support from a reputable manufacturer