Manufacturer Part Number
DSS4540X-13
Manufacturer
Diodes Incorporated
Introduction
High-power NPN bipolar junction transistor (BJT)
Designed for high-current, high-voltage switching applications
Product Features and Performance
Rated for up to 900mW of power dissipation
Collector-emitter breakdown voltage up to 40V
Collector current up to 4A
Transition frequency of 70MHz
DC current gain (hFE) of at least 250 at 2A, 2V
Product Advantages
Robust and reliable performance
Compact SOT-89-3 surface mount package
Suitable for a variety of high-power switching applications
Key Technical Parameters
Operating temperature range: -55°C to 150°C
Collector-emitter saturation voltage: 355mV @ 500mA, 5A
Collector cutoff current: 100nA max
Quality and Safety Features
RoHS3 compliant
Manufactured in an ISO-certified facility
Compatibility
Suitable for use in a wide range of electronic circuits and systems
Application Areas
High-current, high-voltage switching
Power amplifiers
Motor control
Industrial automation
Automotive electronics
Product Lifecycle
Current production model, no plans for discontinuation
Replacement models or upgrades may become available in the future
Key Reasons to Choose This Product
Robust and reliable performance
High power handling capability
Compact surface mount package
Suitable for a variety of high-power switching applications
RoHS3 compliance for environmental responsibility