DSS4160T-7 - Diodes Incorporated

Manufacturer Part Number

DSS4160T-7

Manufacturer

Diodes Incorporated

Introduction

High-performance NPN bipolar junction transistor (BJT)

Suitable for general-purpose amplifier and switching applications

Product Features and Performance

Wide operating temperature range: -55°C to 150°C

High maximum collector power: 725 mW

High collector-emitter breakdown voltage: 60 V

High maximum collector current: 1 A

High DC current gain (hFE) of 200 min. at 500 mA, 5 V

High transition frequency of 150 MHz

Product Advantages

Excellent thermal stability

Robust construction for reliable operation

Compact SOT-23-3 surface-mount package

Lead-free and RoHS3 compliant

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 60 V

Collector Current (Max): 1 A

Collector Cutoff Current (Max): 100 nA

VCE Saturation Voltage (Max): 280 mV @ 100 mA, 1 A

DC Current Gain (hFE) (Min): 200 @ 500 mA, 5 V

Transition Frequency: 150 MHz

Quality and Safety Features

RoHS3 compliant

Lead-free construction

Reliable performance in a wide temperature range

Compatibility

Suitable for various general-purpose amplifier and switching applications

Application Areas

Analog and digital circuits

Power supplies

Switching applications

Amplifier circuits

Product Lifecycle

This product is currently available and not nearing discontinuation.

Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

Excellent thermal stability and reliability

High performance specifications for versatile applications

Compact and lead-free surface-mount package

Compliance with RoHS3 environmental regulations