DNLS350Y-13 - Diodes Incorporated

Manufacturer Part Number

DNLS350Y-13

Manufacturer

Diodes Incorporated

Introduction

High-performance NPN bipolar junction transistor (BJT)

Suitable for a wide range of power amplifier and switching applications

Product Features and Performance

Capable of handling up to 3A of collector current

Wide operating temperature range from -55°C to 150°C

Excellent high-frequency performance with 100MHz transition frequency

Low collector-emitter saturation voltage of 370mV @ 300mA, 3A

High DC current gain of 300 min @ 1A, 2V

Product Advantages

Robust construction and reliable performance

Versatile application in power amplifiers and switches

Compact surface mount package (SOT-89-3)

RoHS compliance for environmentally-friendly use

Key Technical Parameters

Power Rating: 1W

Collector-Emitter Breakdown Voltage: 50V

Collector Cutoff Current: 100nA (max)

Quality and Safety Features

RoHS3 compliant for restricted substance control

Manufactured in an ISO-certified facility for quality assurance

Compatibility

Suitable for a wide range of electronic circuit designs requiring a high-performance NPN transistor

Application Areas

Power amplifiers

Switching circuits

Voltage regulators

Driver circuits

General-purpose power electronics

Product Lifecycle

Currently in active production

No plans for discontinuation, with ongoing availability and support

Key Reasons to Choose This Product

Excellent performance characteristics for power and switching applications

Reliable and robust design for long-term use

Compact surface mount package for efficient board integration

RoHS compliance for environmentally-conscious design

Proven track record and technical support from Diodes Incorporated