DNLS350E-13 - Diodes Incorporated

Manufacturer Part Number

DNLS350E-13

Manufacturer

Diodes Incorporated

Introduction

High-performance NPN bipolar junction transistor (BJT)

Designed for a wide range of power amplifier and switching applications

Product Features and Performance

Capable of handling up to 3A of collector current

High frequency operation up to 100MHz

Low collector-emitter saturation voltage (VCE(sat)) of 290mV @ 200mA, 2A

Wide operating temperature range of -55°C to 150°C

Product Advantages

Compact surface-mount SOT-223-3 package

RoHS-compliant and environmentally friendly

Excellent thermal management and power dissipation capabilities

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 50V

Collector Cutoff Current (ICBO): 100nA (max)

DC Current Gain (hFE): 100 (min) @ 2A, 2V

Quality and Safety Features

Compliant with RoHS3 environmental directives

Robust and reliable design for long-term performance

Compatibility

Suitable for a wide range of power amplifier and switching applications

Compatible with various electronic circuits and systems

Application Areas

Power amplifiers

Switching circuits

Voltage regulators

Motor drives

Industrial electronics

Product Lifecycle

This product is an active and widely available device

No immediate plans for discontinuation, and replacement options are readily available

Key Reasons to Choose This Product

Excellent performance characteristics, including high current handling and high frequency operation

Compact and efficient surface-mount package design

Robust and reliable construction for long-term reliability

Wide operating temperature range for diverse application environments

RoHS compliance for environmentally conscious design