Manufacturer Part Number
2N6517TA
Manufacturer
onsemi
Introduction
The 2N6517TA is a high-voltage, high-power, general-purpose NPN bipolar junction transistor (BJT).
Product Features and Performance
High voltage capability (350V Collector-Emitter Breakdown Voltage)
High power handling (625mW Power Dissipation)
High current capacity (500mA Collector Current)
High frequency performance (200MHz Transition Frequency)
Stable DC current gain (20 hFE min) across operating conditions
Product Advantages
Suitable for high-voltage, high-power switching and amplification applications
Robust design for reliable operation
Broad compatibility and versatility
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 350V
Collector Current: 500mA
Power Dissipation: 625mW
Transition Frequency: 200MHz
DC Current Gain: 20 hFE min
Quality and Safety Features
RoHS3 compliant
TO-92-3 package for reliable through-hole mounting
Compatibility
Compatible with a variety of high-voltage, high-power applications
Can be used as a replacement or upgrade for similar NPN BJT transistors
Application Areas
High-voltage switching circuits
Power amplifiers
Industrial control systems
Automotive electronics
Product Lifecycle
Currently in active production
Replacement or upgrade options available if needed in the future
Key Reasons to Choose This Product
Excellent high-voltage and high-power capabilities
Reliable performance across a wide range of operating conditions
Compatibility with various high-power applications
Robust and RoHS-compliant design for long-term use