Manufacturer Part Number
2N6520TA
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
RoHS3 Compliant
TO-92-3 Package
Operating Temperature: 150°C (TJ)
Power Rating: 625 mW
Collector-Emitter Breakdown Voltage: 350 V
Collector Current: 500 mA
Collector Cutoff Current: 50 nA (ICBO)
Collector-Emitter Saturation Voltage: 1 V @ 5 mA, 50 mA
DC Current Gain (hFE): 20 @ 50 mA, 10 V
Transition Frequency: 200 MHz
Product Advantages
High Voltage Capability
High Collector Current Rating
Suitable for High-Frequency Applications
Key Technical Parameters
Transistor Type: PNP
Mounting Type: Through-Hole
Quality and Safety Features
RoHS3 Compliant
Compatibility
TO-226-3, TO-92-3 (TO-226AA) Package
Application Areas
Power Amplifiers
Switching Circuits
Audio Circuits
General-Purpose Amplification
Product Lifecycle
Active product, no discontinuation information available
Replacements and upgrades may be available
Key Reasons to Choose
High voltage and current ratings
High-frequency performance
RoHS compliance
Widely compatible through-hole package