Manufacturer Part Number
MMBT2907ALT1G
Manufacturer
onsemi
Introduction
High-performance PNP bipolar junction transistor (BJT)
Suitable for a wide range of small-signal and switching applications
Product Features and Performance
Wide operating temperature range of -55°C to 150°C
Low collector-emitter saturation voltage (Vce(sat)) of 1.6V @ 50mA, 500mA
High DC current gain (hFE) of 100 @ 150mA, 10V
High transition frequency (fT) of 200MHz
Low collector cutoff current (ICBO) of 10nA
Product Advantages
Excellent switching and amplification capabilities
Reliable performance across a wide temperature range
Small and compact surface-mount package
Key Technical Parameters
Power rating: 300mW
Collector-emitter breakdown voltage (VCEO): 60V
Collector current (IC): 600mA
Quality and Safety Features
RoHS3 compliant
Qualified to industrial and automotive grade standards
Compatibility
Compatible with a variety of electronic circuits and systems
Application Areas
Small-signal amplifiers
Switches
Drivers
Buffers
General-purpose electronic circuits
Product Lifecycle
Currently in active production
Replacement or upgraded models may become available in the future
Several Key Reasons to Choose This Product
Reliable and consistent performance
Compact and space-efficient surface-mount package
Wide operating temperature range for versatile applications
Excellent switching and amplification characteristics
Cost-effective solution for small-signal transistor needs