DMT6004LPS-13 - Diodes Incorporated

Manufacturer Part Number

DMT6004LPS-13

Manufacturer

Diodes Incorporated

Introduction

High-performance N-channel MOSFET transistor designed for power conversion and control applications.

Product Features and Performance

60V drain-to-source voltage

8mΩ on-resistance at 25A, 10V

22A continuous drain current at 25°C

4515pF input capacitance at 30V

1W power dissipation at 25°C, 105W at case temperature

N-channel MOSFET technology

Product Advantages

Low on-resistance for high efficiency

High current handling capability

Fast switching speed

Wide operating temperature range

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 60V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 2.8mΩ @ 25A, 10V

Continuous Drain Current (Id): 22A @ 25°C, 90A @ case temperature

Input Capacitance (Ciss): 4515pF @ 30V

Power Dissipation: 2.1W @ 25°C, 105W @ case temperature

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

Directly compatible with a wide range of electronic circuits and power supply designs

Application Areas

Switch-mode power supplies

Motor drives

High-efficiency power conversion

Industrial and automotive electronics

Product Lifecycle

This product is currently in production and widely available

No plans for discontinuation at this time

Upgrades and replacements may become available in the future as technology advances

Key Reasons to Choose This Product

Excellent efficiency and power handling due to low on-resistance

High current capability for demanding applications

Reliable performance across a wide temperature range

RoHS compliance for use in environmentally-conscious designs

Compatibility with a variety of electronic circuits and power systems