Manufacturer Part Number
DMT6007LFG-7
Manufacturer
Diodes Incorporated
Introduction
High-performance N-channel MOSFET with low on-resistance for power management and control applications.
Product Features and Performance
Low on-resistance of 6 mΩ at 20 A, 10 V
High current capability up to 80 A (at Tc)
Wide operating temperature range of -55°C to 150°C
Fast switching with low gate charge of 41.3 nC at 10 V
High input capacitance of 2090 pF at 30 V
Product Advantages
Excellent thermal management with high power dissipation of 62.5 W (at Tc)
Reliable and robust design for industrial and automotive applications
Optimized for efficient power conversion and control
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60 V
Gate-to-Source Voltage (Vgs): ±20 V
Continuous Drain Current (Id): 15 A (at Ta), 80 A (at Tc)
On-Resistance (Rds(on)): 6 mΩ at 20 A, 10 V
Input Capacitance (Ciss): 2090 pF at 30 V
Power Dissipation: 2.2 W (at Ta), 62.5 W (at Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for industrial and automotive applications
Compatibility
Compatible with a wide range of power management and control applications
Application Areas
Power supplies
Motor drives
Industrial controls
Automotive electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent performance with low on-resistance and high current capability
Efficient power management and control with fast switching and low gate charge
Reliable and robust design for demanding industrial and automotive applications
Optimized thermal management for high power dissipation
RoHS3 compliance for environmental considerations