Manufacturer Part Number
DMN55D0UT-7
Manufacturer
Diodes Incorporated
Introduction
This is a single N-channel MOSFET transistor.
Product Features and Performance
Operates at up to 50V drain-source voltage
Capable of 160mA continuous drain current at 25°C
On-resistance of 4Ω at 100mA, 4V gate-source voltage
Input capacitance of 25pF at 10V drain-source voltage
Maximum power dissipation of 200mW at 25°C ambient temperature
Product Advantages
Compact SOT-523 surface mount package
Wide operating temperature range of -55°C to 150°C
Low on-resistance for efficient switching
Suitable for a variety of low-power applications
Key Technical Parameters
Drain-source voltage (Vdss): 50V
Gate-source voltage (Vgs): ±12V
On-resistance (Rds(on)): 4Ω @ 100mA, 4V
Drain current (Id): 160mA @ 25°C
Input capacitance (Ciss): 25pF @ 10V
Power dissipation (Pd): 200mW @ 25°C
Quality and Safety Features
RoHS3 compliant
Manufactured to high quality standards
Compatibility
Can be used in a wide range of low-power electronic circuits and devices.
Application Areas
Switching circuits
Logic gates
Amplifiers
Power management
General-purpose low-power electronics
Product Lifecycle
This product is currently in production and available. No information on discontinuation or replacement models.
Key Reasons to Choose This Product
Compact and efficient design
Wide operating temperature range
Low on-resistance for improved efficiency
Suitable for a variety of low-power applications
Manufactured to high quality standards