Manufacturer Part Number
DMN53D0LQ-7
Manufacturer
Diodes Incorporated
Introduction
High-performance N-channel enhancement-mode MOSFET transistor designed for automotive and industrial applications.
Product Features and Performance
Low on-resistance of 1.6 ohms at 500 mA, 10 V
High drain current rating of 500 mA at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 46 pF at 25 V
Fast switching speed
High ruggedness and reliability
Product Advantages
Excellent thermal management
Robust and stable performance across wide temperature range
Efficient power handling
Compact surface-mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 50 V
Gate-to-Source Voltage (Vgs) Max: ±20 V
Threshold Voltage (Vgs(th)): 1.5 V at 250 μA
On-Resistance (Rds(on)): 1.6 ohms at 500 mA, 10 V
Input Capacitance (Ciss): 46 pF at 25 V
Power Dissipation (Pd): 370 mW at 25°C
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS 3 compliant
Compatibility
Compatible with a wide range of electronic systems and circuits
Application Areas
Automotive electronics
Industrial control systems
Power management circuits
Switching circuits
General-purpose amplification and switching
Product Lifecycle
This product is currently in production and widely available.
Replacements or upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent performance and reliability for automotive and industrial applications
Efficient power handling and thermal management
Compact surface-mount package for space-constrained designs
Wide operating temperature range for demanding environments
AEC-Q101 qualification for automotive reliability