Manufacturer Part Number
DMN53D0LDW-7
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
N-Channel Dual MOSFET Array
Product Features and Performance
Dual N-Channel MOSFET Array
50V Drain-to-Source Voltage
6Ω Typical On-Resistance
360mA Continuous Drain Current
Logic Level Gate
Low Input Capacitance (46pF)
Low Gate Charge (0.6nC)
-55°C to 150°C Operating Temperature Range
310mW Power Dissipation
Product Advantages
Compact SOT-363 Package
Excellent Performance for Space-Constrained Applications
Low On-Resistance for Efficient Power Switching
Suitable for Logic-Level Gate Driving
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 50V
On-Resistance (Rds(on)): 1.6Ω
Continuous Drain Current (Id): 360mA
Input Capacitance (Ciss): 46pF
Gate Charge (Qg): 0.6nC
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
RoHS3 Compliant
Suitable for Reflow Soldering
Compatibility
Surface Mount (SOT-363 Package)
Application Areas
Power Management Circuits
Motor Control
Switching Applications
General-Purpose Switching
Product Lifecycle
Current Product
Replacements and Upgrades Available
Key Reasons to Choose This Product
Compact SOT-363 Package for Space-Constrained Designs
Low On-Resistance for Efficient Power Switching
Logic Level Gate for Easy Integration
Wide Operating Temperature Range (-55°C to 150°C)
RoHS3 Compliance for Environmental Friendliness
Proven Reliability and Performance from Diodes Incorporated