DMN2022UFDF-7 - Diodes Incorporated

Manufacturer Part Number

DMN2022UFDF-7

Manufacturer

Diodes Incorporated

Introduction

N-Channel MOSFET Transistor

Product Features and Performance

Drain to Source Voltage (Vdss) of 20V

Low On-Resistance (Rds(on)) of 22mOhm @ 4A, 4.5V

Continuous Drain Current (Id) of 7.9A at 25°C

Input Capacitance (Ciss) of 907pF @ 10V

Power Dissipation of 660mW at 25°C

Product Advantages

Excellent RDS(on) performance for efficient power switching

High current capability for demanding applications

Small package size for space-constrained designs

Key Technical Parameters

Package: 6-UDFN Exposed Pad

Operating Temperature Range: -55°C to 150°C

Gate-to-Source Voltage (Vgs) Max: ±8V

Gate Charge (Qg) Max: 18nC @ 8V

Quality and Safety Features

RoHS3 Compliant

Tape & Reel Packaging

Compatibility

Can be used as a replacement or upgrade for similar N-Channel MOSFET transistors in relevant applications.

Application Areas

Power Supplies

Motor Drives

Telecommunications Equipment

Industrial Controls

Product Lifecycle

Currently in active production. No known plans for discontinuation. Replacement or upgrade options may be available from the manufacturer or other suppliers.

Key Reasons to Choose This Product

Excellent RDS(on) performance for efficient power switching

High current capability to handle demanding applications

Small package size for space-constrained designs

RoHS3 compliance for use in restricted environments

Proven reliability and performance from a trusted manufacturer