DMN2019UTS-13 - Diodes Incorporated

Manufacturer Part Number

DMN2019UTS-13

Manufacturer

Diodes Incorporated

Introduction

Discrete Semiconductor Products

Transistors FETs, MOSFETs Arrays

Product Features and Performance

ROHS3 Compliant

8-TSSOP (0.173", 4.40mm Width) Surface Mount package

Operating Temperature: -55°C ~ 150°C (TJ)

Power Max: 780mW

Configuration: 2 N-Channel (Dual) Common Drain

Drain to Source Voltage (Vdss): 20V

Rds On (Max) @ Id, Vgs: 18.5mOhm @ 7A, 10V

MOSFET (Metal Oxide) Technology

Current Continuous Drain (Id) @ 25°C: 5.4A

Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V

Logic Level Gate

Vgs(th) (Max) @ Id: 950mV @ 250A

Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V

Product Advantages

ROHS3 Compliant

Surface Mount package

Wide Operating Temperature Range

Dual N-Channel MOSFET Configuration

Low On-Resistance

High Drain Current Capability

Logic Level Gate

Low Gate Charge

Key Technical Parameters

Drain to Source Voltage (Vdss): 20V

Rds On (Max) @ Id, Vgs: 18.5mOhm @ 7A, 10V

Current Continuous Drain (Id) @ 25°C: 5.4A

Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V

Vgs(th) (Max) @ Id: 950mV @ 250A

Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V

Quality and Safety Features

ROHS3 Compliant

Compatibility

Surface Mount applications

Application Areas

Discrete Semiconductor applications

Power Management circuits

Switching circuits

Product Lifecycle

Currently available

No information on discontinuation or replacements

Key Reasons to Choose This Product

ROHS3 Compliant

Wide Operating Temperature Range

Dual N-Channel MOSFET Configuration

Low On-Resistance

High Drain Current Capability

Logic Level Gate

Low Gate Charge

Surface Mount package for easy integration