DMN2016UTS-13 - Diodes Incorporated

Manufacturer Part Number

DMN2016UTS-13

Manufacturer

Diodes Incorporated

Introduction

Dual N-Channel Enhancement Mode MOSFET

Product Features and Performance

Operating temperature range: -55°C to 150°C

Power rating: 880mW

Configuration: 2 N-Channel (Dual) Common Drain

Drain-to-Source Voltage (Vdss): 20V

On-Resistance (Rds(on)): 14.5mΩ @ 9.4A, 4.5V

Continuous Drain Current (Id): 8.58A @ 25°C

Input Capacitance (Ciss): 1495pF @ 10V

Gate Threshold Voltage (Vgs(th)): 1V @ 250μA

Gate Charge (Qg): 16.5nC @ 4.5V

Product Advantages

High power density

Low on-resistance

Logic level gate

Key Technical Parameters

Technology: MOSFET (Metal Oxide)

Package: 8-TSSOP (0.173", 4.40mm Width)

Mounting Type: Surface Mount

Quality and Safety Features

RoHS3 Compliant

Compatibility

Compatible with various electronic systems and applications

Application Areas

Switching applications

Power management circuits

Motor control

General-purpose power switching

Product Lifecycle

Currently available

No indication of discontinuation or replacement

Several Key Reasons to Choose This Product

High-performance dual N-Channel MOSFET

Compact 8-TSSOP package

Excellent power efficiency and thermal management

Suitable for a wide range of power switching applications