DMN2009LSS-13 - Diodes Incorporated

Manufacturer Part Number

DMN2009LSS-13

Manufacturer

Diodes Incorporated

Introduction

N-channel MOSFET transistor

Surface mount package

Product Features and Performance

Drain to source voltage (Vdss) of 20V

Maximum gate-source voltage (Vgs) of ±12V

Very low on-resistance (Rds(on)) of 8mΩ @ 12A, 10V

Continuous drain current (Id) of 12A at 25°C

Input capacitance (Ciss) of 2555pF @ 10V

Power dissipation (max) of 2W at 25°C

Gate threshold voltage (Vgs(th)) of 1.2V @ 250A

Product Advantages

Efficient power handling

Low on-resistance for low power loss

Compact surface mount package

Key Technical Parameters

MOSFET technology

N-channel FET type

8-SOIC package

Quality and Safety Features

RoHS3 compliant

Operating temperature range of -55°C to 150°C

Compatibility

Suitable for a wide range of applications requiring efficient power switching

Application Areas

Power supplies

Motor drives

Switching circuits

Amplifiers

Product Lifecycle

Currently in production

Replacement parts and upgrades available

Key Reasons to Choose This Product

Excellent performance-to-size ratio

Efficient power handling and low power loss

Reliable operation over wide temperature range

Compatibility with various power electronics applications