DMN2014LHAB-7 - Diodes Incorporated

Manufacturer Part Number

DMN2014LHAB-7

Manufacturer

Diodes Incorporated

Introduction

Two N-channel common-drain MOSFET array in a 6-pin UFDFN package

Product Features and Performance

20V drain-source voltage

13mΩ maximum on-resistance at 4A, 4.5V

9A continuous drain current at 25°C

1550pF maximum input capacitance at 10V

16nC maximum gate charge at 4.5V

Logic-level gate with 1.1V threshold at 250μA

Product Advantages

Compact 6-pin UFDFN package

Low on-resistance for efficient power switching

High current handling capability

Suitable for logic-level gate drive

Key Technical Parameters

Drain-source voltage: 20V

On-resistance: 13mΩ max at 4A, 4.5V

Drain current: 9A continuous at 25°C

Input capacitance: 1550pF max at 10V

Gate charge: 16nC max at 4.5V

Gate threshold voltage: 1.1V max at 250μA

Quality and Safety Features

RoHS3 compliant

Operating temperature range: -55°C to 150°C

Compatibility

Surface mount package, compatible with standard SMT assembly processes

Application Areas

Power management

Motor control

Switching power supplies

General-purpose power switching

Product Lifecycle

The DMN2014LHAB-7 is an actively supported product, with no plans for discontinuation. Replacement or upgrade options may be available in the future.

Key Reasons to Choose This Product

Compact 6-pin UFDFN package for space-constrained designs

Low on-resistance for efficient power switching

High current handling capability for demanding applications

Logic-level gate drive simplifies implementation

Wide operating temperature range for robust performance

RoHS3 compliance for environmentally friendly designs