DMN2005LP4K-7 - Diodes Incorporated

Manufacturer Part Number

DMN2005LP4K-7

Manufacturer

Diodes Incorporated

Introduction

N-Channel MOSFET

Product Features and Performance

Continuous Drain Current (Id) of 200mA at 25°C

Drain-Source Voltage (Vdss) of 20V

Gate-Source Voltage (Vgs) of ±10V

On-Resistance (Rds(on)) of 1.5Ohm @ 10mA, 4V

Input Capacitance (Ciss) of 41pF @ 3V

Power Dissipation (Pd) of 400mW at 25°C

Product Advantages

Low On-Resistance for improved energy efficiency

High Drain Current capability

Wide Operating Temperature Range of -65°C to 150°C

Small X2-DFN1006-3 Surface Mount Package

Key Technical Parameters

MOSFET Technology

N-Channel Type

Threshold Voltage (Vgs(th)) of 900mV @ 100μA

Drive Voltage Range of 1.5V to 4V

Quality and Safety Features

RoHS3 Compliant

Tape & Reel Packaging

Compatibility

Universal compatibility with various electronic circuits and systems requiring a small, low-resistance N-Channel MOSFET.

Application Areas

Power Management Circuits

Amplifier and Switch Circuits

LED Drivers

General Purpose Switching Applications

Product Lifecycle

Current production, no discontinuation plans. Replacement or upgrade options available from the manufacturer.

Key Reasons to Choose

Excellent performance-to-size ratio with low On-Resistance and high Drain Current

Wide Operating Temperature Range suitable for diverse applications

Small footprint Surface Mount package for compact designs

RoHS compliance for environmental responsibility

Availability in Tape & Reel packaging for automated assembly