Manufacturer Part Number
DMN2005DLP4K-7
Manufacturer
Diodes Incorporated
Introduction
Dual N-Channel MOSFET array in a compact DFN package
Product Features and Performance
Dual N-Channel MOSFET configuration
20V Drain-Source Voltage
5Ω On-Resistance
300mA Continuous Drain Current
-65°C to 150°C Operating Temperature Range
400mW Power Dissipation
Product Advantages
Space-saving DFN package
Integrated dual MOSFET design
Low on-resistance for efficient power switching
Wide operating temperature range
Key Technical Parameters
Drain-Source Voltage: 20V
On-Resistance: 1.5Ω
Continuous Drain Current: 300mA
Threshold Voltage: 900mV
Power Dissipation: 400mW
Quality and Safety Features
RoHS3 compliant
ESD protection
Compatibility
Surface mount technology (SMT) compatible
Application Areas
Power management circuits
Switching applications
Telecommunications equipment
Industrial automation
Product Lifecycle
The DMN2005DLP4K-7 is an active product, and Diodes Incorporated continues to supply it. Replacement or upgrade options may be available.
Several Key Reasons to Choose This Product
Compact dual MOSFET design in a space-saving package
Low on-resistance for efficient power switching
Wide operating temperature range
RoHS3 compliance for environmental sustainability
Suitable for a variety of power management and switching applications