Manufacturer Part Number
DMG3414U-7
Manufacturer
Diodes Incorporated
Introduction
N-Channel MOSFET transistor
Designed for power management and switching applications
Product Features and Performance
Drain-Source Voltage (Vds) up to 20V
Low on-resistance (Rds(on)) of 25mΩ @ 8.2A, 4.5V
Continuous Drain Current (Id) of 4.2A at 25°C
Input Capacitance (Ciss) of 829.9pF @ 10V
Power Dissipation (Pd) of 780mW at 25°C
Product Advantages
Excellent power efficiency due to low Rds(on)
High switching speed and low gate charge for fast switching
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
N-Channel MOSFET
Vds: 20V
Vgs (max): ±8V
Rds(on): 25mΩ @ 8.2A, 4.5V
Id (continuous): 4.2A @ 25°C
Ciss: 829.9pF @ 10V
Pd: 780mW @ 25°C
Quality and Safety Features
RoHS3 compliant
Designed and tested for high reliability
Compatibility
Compatible with various power management and switching applications
Application Areas
Power management circuits
Switching power supplies
Motor drives
Battery chargers
LED drivers
Product Lifecycle
This product is an active, in-production part from Diodes Incorporated
Replacement or upgraded parts may be available in the future
Key Reasons to Choose This Product
Excellent power efficiency due to low Rds(on)
High switching speed and low gate charge for fast switching
Wide operating temperature range for diverse applications
RoHS3 compliant for environmental safety
Reliable performance backed by Diodes Incorporated