Manufacturer Part Number
DMG3414UQ-7
Manufacturer
Diodes Incorporated
Introduction
High-performance, general-purpose N-channel MOSFET transistor designed for automotive and industrial applications.
Product Features and Performance
Low on-resistance (RDS(on)) for high efficiency
High switching speed for fast switching applications
Suitable for power management, load switching, and other power conversion circuits
Withstands high drain-to-source voltage up to 20V
Wide operating temperature range from -55°C to 150°C
Product Advantages
Excellent thermal performance and power dissipation
Robust design for reliable operation in demanding environments
Compatible with automotive and industrial standards
Key Technical Parameters
Drain-to-Source Voltage (VDS): 20V
Maximum Gate-to-Source Voltage (VGS): ±8V
On-Resistance (RDS(on)): 25mΩ @ 8.2A, 4.5V
Continuous Drain Current (ID): 4.2A @ 25°C
Input Capacitance (Ciss): 829.9pF @ 10V
Power Dissipation (PD): 780mW
Quality and Safety Features
RoHS3 compliant
Designed to meet AEC-Q101 automotive reliability standard
Compatibility
Surface mount package (SOT-23-3)
Compatible with automotive and industrial electronic systems
Application Areas
Power management circuits
Load switching applications
Motor control
Battery charging and discharging
DC-DC converters
Product Lifecycle
Currently in production
No indication of discontinuation
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose
Excellent thermal performance and power dissipation
Robust design for reliable operation in demanding environments
Compatibility with automotive and industrial standards
Suitable for a wide range of power management and switching applications
Availability of replacement or upgrade options from the manufacturer