Manufacturer Part Number
DMG2301L-7
Manufacturer
Diodes Incorporated
Introduction
The DMG2301L-7 is a p-channel MOSFET transistor from Diodes Incorporated, designed for use in a variety of electronic applications.
Product Features and Performance
P-channel MOSFET transistor
Drain-to-Source Voltage (Vdss) of 20V
Gate-to-Source Voltage (Vgs) of ±8V
On-Resistance (Rds(on)) of 120mΩ @ 2.8A, 4.5V
Continuous Drain Current (Id) of 3A @ 25°C
Input Capacitance (Ciss) of 476pF @ 10V
Power Dissipation (Pd) of 1.5W @ 25°C
Operating Temperature range of -55°C to 150°C
Product Advantages
Low on-resistance for efficient power switching
Wide operating voltage and temperature range
Small SOT-23-3 surface mount package
Key Technical Parameters
MOSFET technology
P-channel type
Vdss: 20V
Vgs(th): 1.2V @ 250μA
Rds(on): 120mΩ @ 2.8A, 4.5V
Id: 3A @ 25°C
Ciss: 476pF @ 10V
Quality and Safety Features
RoHS3 compliant
Reliable and durable design
Compatibility
Compatible with a variety of electronic circuits and systems
Application Areas
Power management
Switching circuits
Amplifier circuits
General-purpose electronic applications
Product Lifecycle
Currently in active production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Efficient power switching performance with low on-resistance
Wide operating voltage and temperature range
Compact surface mount package
Reliable and RoHS3 compliant design
Suitable for a variety of electronic applications