Manufacturer Part Number
DMG2301U-7
Manufacturer
Diodes Incorporated
Introduction
P-Channel MOSFET Transistor
Product Features and Performance
20V Drain-to-Source Voltage (Vdss)
±8V Gate-to-Source Voltage (Vgs)
130mΩ Maximum On-Resistance (Rds(on)) at 2.8A, 4.5V
5A Continuous Drain Current (Id) at 25°C
608pF Maximum Input Capacitance (Ciss) at 6V
800mW Maximum Power Dissipation at 25°C
5nC Maximum Gate Charge (Qg) at 4.5V
Product Advantages
Low On-Resistance for Efficient Power Switching
Fast Switching Speed
Wide Operating Temperature Range (-55°C to 150°C)
Compact SOT-23-3 Surface Mount Package
Key Technical Parameters
P-Channel MOSFET Technology
1V Maximum Gate Threshold Voltage (Vgs(th)) at 250μA
5V and 4.5V Drive Voltage Range
Quality and Safety Features
RoHS3 Compliant
Suitable for Reflow Soldering
Compatibility
Compatible with various electronic circuits and applications requiring a P-Channel MOSFET
Application Areas
Power management circuits
Switching circuits
General purpose electronic applications
Product Lifecycle
Current product, no plans for discontinuation
Replacements and upgrades available if needed
Key Reasons to Choose
Excellent performance-to-price ratio
Reliable and durable construction
Wide operating temperature range
Compact and space-saving surface mount package
RoHS compliance for environmental safety