DMG1029SV-7 - Diodes Incorporated

Manufacturer Part Number

DMG1029SV-7

Manufacturer

Diodes Incorporated

Introduction

This product is a dual N-channel and P-channel MOSFET transistor array from Diodes Incorporated, part of the DMG1029 series.

Product Features and Performance

N and P-Channel MOSFET configuration

60V Drain-Source Voltage (Vdss)

7Ω On-Resistance (Rds(on)) at 500mA, 10V

450mW Maximum Power Dissipation

-55°C to 150°C Operating Temperature Range

30pF Input Capacitance (Ciss) at 25V

3nC Gate Charge (Qg) at 4.5V

Logic Level Gate with 2.5V Threshold Voltage (Vgs(th))

Product Advantages

Space-saving dual MOSFET design in a small SOT-563 package

Efficient power handling with low on-resistance

Wide operating temperature range

Suitable for low-power switching and control applications

Key Technical Parameters

Drain-Source Voltage (Vdss): 60V

On-Resistance (Rds(on)): 1.7Ω @ 500mA, 10V

Maximum Power Dissipation: 450mW

Operating Temperature Range: -55°C to 150°C

Input Capacitance (Ciss): 30pF @ 25V

Gate Charge (Qg): 0.3nC @ 4.5V

Threshold Voltage (Vgs(th)): 2.5V @ 250μA

Quality and Safety Features

RoHS3 compliant

ESD protection

Compatibility

Surface mount SOT-563 and SOT-666 packages

Application Areas

Low-power switching and control circuits

Power management applications

Automotive electronics

Industrial control systems

Product Lifecycle

This product is currently in production and available for purchase. There are no known plans for discontinuation or replacement at this time.

Key Reasons to Choose This Product

Efficient power handling with low on-resistance for improved energy efficiency.

Wide operating temperature range for use in diverse environmental conditions.

Small, space-saving dual MOSFET design in a compact SOT-563 package.

Logic level gate for easy integration with microcontrollers and other low-voltage control circuits.

RoHS3 compliance for use in environmentally-conscious applications.