Manufacturer Part Number
DGD2190S8-13
Manufacturer
Diodes
Introduction
The DGD2190S8-13 is a gate driver specifically designed for power management applications, compatible with IGBT and N-Channel MOSFET in half-bridge configurations.
Product Features and Performance
Supports Half-Bridge driven configuration
Capable of driving two independent channels
Suitable for IGBT and N-Channel MOSFET gate types
Supply voltage range between 10V and 20V
Logic input thresholds of 0.8V (VIL) and 2.5V (VIH)
Peak output current of 4.5A for both sourcing and sinking
Non-inverting input type
High side voltage can go up to 600V (Bootstrap)
Typical rise time of 25ns and fall time of 20ns
Operates over a wide temperature range from -40°C to 150°C
Product Advantages
High peak output current ensures robust drive capability
Wide input logic voltage range enables compatibility with various logic families
Fast switching with low rise and fall times improves efficiency
High temperature operation suitable for demanding environments
Key Technical Parameters
Channel Type: Independent
Voltage – Supply: 10V ~ 20V
Current Peak Output (Source, Sink): 4.5A, 4.5A
High Side Voltage Max (Bootstrap): 600 V
Rise / Fall Time (Typ): 25ns, 20ns
Operating Temperature: -40°C ~ 150°C (TJ)
Quality and Safety Features
Built to handle high voltage levels safely
Robust performance under wide operating temperatures ensures reliability
Compatibility
Compatible with both IGBT and N-Channel MOSFET gate types
Fits with surface mount technology and comes in 8-SOIC package
Application Areas
Suitable for various Power Management applications
Specifically designed for Half-Bridge configurations in PMIC applications
Product Lifecycle
Currently marked as Obsolete
Customers should seek replacements or potential upgrades due to discontinuation
Several Key Reasons to Choose This Product
High side voltage capability up to 600V for versatile applications
Sustains operational efficiency with fast rise and fall times
Output current capacity of 4.5A enhances driving power
Resilient across extreme temperature ranges from -40°C to 150°C
Obsolescence status prompts consideration of future-proof alternatives in design planning
DGD2113S16-13Diodes IncorporatedIC GATE DRVR HALF-BRIDGE 16SO