Manufacturer Part Number
DGD21904MS14-13
Manufacturer
diodes
Introduction
The DGD21904MS14-13 is a high-performance gate driver designed for driving IGBT and N-Channel MOSFET gates, suitable for half-bridge configurations.
Product Features and Performance
Independent channel gate driver for half-bridge configurations
Supports IGBT and N-Channel MOSFET gate types
Non-inverting input type
High side voltage can handle up to 600V (Bootstrap)
Fast rise and fall times (25ns/20ns respectively)
Operates over a wide supply voltage range (10V to 20V)
Product Advantages
Efficient handling of higher voltages
Quick switching capabilities improve overall device performance
Broad temperature operational range (-40°C to 125°C)
Key Technical Parameters
Logic Voltage VIL, VIH: 0.8V, 2.5V
Current Peak Output (Source, Sink): 4.5A, 4.5A
Supply Voltage: 10V ~ 20V
High Side Voltage Max (Bootstrap): 600V
Rise / Fall Time (Typ): 25ns, 20ns
Operating Temperature: -40°C ~ 125°C
Quality and Safety Features
Suitable for high side voltage up to 600V, ensuring safe operation in high-voltage environments
Operates reliably across a broad temperature range
Compatibility
Compatible with various IGBT and N-Channel MOSFET models
Application Areas
High-efficiency power converters
Motor drives and controllers
Renewable energy inverters
Product Lifecycle
Currently active with no advised discontinuation
Availability for replacements and upgrades is maintained
Several Key Reasons to Choose This Product
High power output capability with peak currents of 4.5A for both sourcing and sinking
Fast switching with 25ns rise time and 20ns fall time enhances device response
Wide operating temperature range ensures device reliability in various environments
Broad voltage supply range increases versatility in application
Robust high side voltage handling up to 600V suitable for high-voltage applications
