Manufacturer Part Number
DGD2190MS8-13
Manufacturer
Diodes
Introduction
The DGD2190MS8-13 is a high-efficiency, power management integrated circuit (PMIC), specifically a half-bridge gate driver designed for IGBT and N-Channel MOSFETs, ideal for a wide range of power applications.
Product Features and Performance
Drives Half-Bridge Configurations
Independent Channel Operation
2 Driver Channels
Supports IGBT, N-Channel MOSFET Gates
Supply Voltage Range 10V to 20V
Non-Inverting Inputs
High Side Voltage up to 600V for Bootstrap Applications
Fast Rise and Fall Times (25ns/20ns)
High Peak Output Currents (4.5A Source, 4.5A Sink)
Product Advantages
Enhanced Power Efficiency
Suitable for High-Frequency Operation
Integrated Under-Voltage Lockout (UVLO)
Over-temperature Protection
Robust Gate Drive Capability
Key Technical Parameters
Voltage - Supply: 10V ~ 20V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output: 4.5A Source, 4.5A Sink
High Side Voltage - Max: 600V (Bootstrap)
Rise / Fall Time: 25ns / 20ns
Operating Temperature Range: -40°C ~ 125°C
Quality and Safety Features
Built-in Under-Voltage Lockout
Over-temperature Shutdown Feature
ESD Protected Inputs
Compatibility
Compatible with Standard IGBT and N-Channel MOSFETs
Compatible with Advanced Power Conversion Topologies
Application Areas
Switching Power Supplies
Motor Controllers
DC-DC Converters
Inverters for Renewable Energy
Industrial Automation Systems
Product Lifecycle
Status: Active
Not nearing discontinuation
Replacement and upgrade options typically available
Several Key Reasons to Choose This Product
High Reliability for Stringent Applications
Flexible for Both High-Power and High-Frequency Systems
Ease of Design with Non-Inverting Configuration
Optimized for a Broad Spectrum of Power Levels and Voltages
Supports Complex Power Management Requirements with Dual Independent Drivers
Robust Thermal Performance for Improved Longevity and Safety
Surface Mount Package Allows for Efficient PCB Design and Assembly
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