Manufacturer Part Number
DDTD142JC-7-F
Manufacturer
Diodes Incorporated
Introduction
Bipolar Junction Transistor (BJT), NPN Pre-Biased
Product Features and Performance
Power Rating: 200 mW
Collector-Emitter Breakdown Voltage: 50 V
Collector Current (Max): 500 mA
Collector Cutoff Current (Max): 500 nA
Collector-Emitter Saturation Voltage: 300 mV @ 2.5 mA, 50 mA
DC Current Gain (hFE): 56 Min @ 50 mA, 5 V
Transition Frequency: 200 MHz
Base Resistor: 470 Ohms
Emitter-Base Resistor: 10 kOhms
Product Advantages
Pre-biased design for easier circuit implementation
High frequency performance
Compact surface mount package
Key Technical Parameters
Power Rating: 200 mW
Collector-Emitter Breakdown Voltage: 50 V
Collector Current (Max): 500 mA
Transition Frequency: 200 MHz
Quality and Safety Features
RoHS3 compliant
Manufacturer's packaging: SOT-23-3
Compatibility
Package: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Application Areas
Amplifier and switching circuits
Biasing and load circuits
General-purpose NPN pre-biased transistor applications
Product Lifecycle
Current production, no known discontinuation
Several Key Reasons to Choose This Product
Pre-biased design for easier circuit implementation
High frequency performance up to 200 MHz
Compact surface mount SOT-23-3 package
RoHS3 compliance for environmental safety
Proven reliability and quality from Diodes Incorporated