Manufacturer Part Number
DDTD114TC-7-F
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Products
Transistors Bipolar (BJT) Single, Pre-Biased
Product Features and Performance
RoHS3 Compliant
Package: TO-236-3, SC-59, SOT-23-3
Power Max: 200 mW
Voltage Collector Emitter Breakdown (Max): 50 V
Current Collector (Ic) (Max): 500 mA
Current Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Frequency Transition: 200 MHz
Resistor Base (R1): 10 kOhms
Mounting Type: Surface Mount
Product Advantages
RoHS3 Compliant
Compact SOT-23-3 package
High current and voltage ratings
Pre-biased for easy use
Key Technical Parameters
Power Max: 200 mW
Voltage Collector Emitter Breakdown (Max): 50 V
Current Collector (Ic) (Max): 500 mA
Frequency Transition: 200 MHz
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with standard SOT-23-3 footprint
Application Areas
Suitable for general-purpose amplifier and switching applications
Product Lifecycle
Currently available product, no plans for discontinuation
Key Reasons to Choose This Product
RoHS3 Compliant
Compact SOT-23-3 package
High current and voltage ratings
Pre-biased for easy use
Suitable for general-purpose amplifier and switching applications