Manufacturer Part Number
DDTD123YC-7-F
Manufacturer
Diodes Incorporated
Introduction
This is a single, pre-biased NPN bipolar junction transistor (BJT) from Diodes Incorporated.
Product Features and Performance
Power rating of 200mW
Collector-emitter breakdown voltage of 50V
Collector current of up to 500mA
Collector cutoff current of 500nA
Collector-emitter saturation voltage of 300mV @ 2.5mA, 50mA
Current gain (hFE) of at least 56 @ 50mA, 5V
Transition frequency of 200MHz
On-chip base and emitter resistors of 2.2kΩ and 10kΩ respectively
Product Advantages
Pre-biased design for simplified circuit implementation
High current and power handling capability
High current gain and frequency performance
Small SOT-23-3 surface mount package
Key Technical Parameters
Manufacturer Part Number: DDTD123YC-7-F
Transistor Type: NPN Pre-Biased
Package: SOT-23-3
Power Rating: 200mW
Collector-Emitter Breakdown Voltage: 50V
Collector Current: 500mA
Collector Cutoff Current: 500nA
Collector-Emitter Saturation Voltage: 300mV @ 2.5mA, 50mA
Current Gain (hFE): 56 @ 50mA, 5V
Transition Frequency: 200MHz
Base Resistor: 2.2kΩ
Emitter Resistor: 10kΩ
Quality and Safety Features
RoHS3 compliant
Packaged in industry-standard SOT-23-3 surface mount package
Compatibility
This transistor is compatible with a wide range of electronic circuits and applications that require a pre-biased NPN BJT.
Application Areas
Amplifier circuits
Switching circuits
Logic gates
Bias circuits
General-purpose electronics
Product Lifecycle
This product is currently in active production and is not nearing discontinuation. Replacement or upgrade options are readily available from Diodes Incorporated.
Key Reasons to Choose This Product
Pre-biased design for simplified circuit implementation
High current and power handling capability
High current gain and frequency performance
Small and compact SOT-23-3 surface mount package
RoHS3 compliance for environmental responsibility
Availability of replacement and upgrade options from the manufacturer
