Manufacturer Part Number
DDTD113ZC-7-F
Manufacturer
Diodes Incorporated
Introduction
NPN pre-biased bipolar junction transistor (BJT) for surface mount applications.
Product Features and Performance
Power rating of 200mW
Collector-emitter breakdown voltage of 50V
Collector current of up to 500mA
Collector cutoff current of 500nA
Vce saturation voltage of 300mV at 2.5mA/50mA
DC current gain (hFE) of 56 at 50mA/5V
Transition frequency of 200MHz
Internal base and emitter resistors of 1kΩ and 10kΩ, respectively
Product Advantages
Pre-biased design for simplified circuit design
Compact SOT-23-3 surface mount package
Suitable for high-speed switching and amplifier applications
Key Technical Parameters
Power rating: 200mW
Collector-emitter breakdown voltage: 50V
Collector current: 500mA
Collector cutoff current: 500nA
Vce saturation voltage: 300mV @ 2.5mA/50mA
DC current gain (hFE): 56 @ 50mA/5V
Transition frequency: 200MHz
Base resistor: 1kΩ
Emitter resistor: 10kΩ
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering process
Compatibility
Compatible with various electronic devices and circuits that require a pre-biased NPN bipolar transistor
Application Areas
High-speed switching
Amplifier circuits
Logic gates
Driver circuits
General-purpose electronics
Product Lifecycle
Current production model, no known discontinuation plans
Replacements and upgrades may be available from the manufacturer or other vendors
Several Key Reasons to Choose This Product
Pre-biased design for simplified circuit design
Compact SOT-23-3 surface mount package
Suitable for high-speed switching and amplifier applications
Wide range of technical parameters to meet various requirements
RoHS3 compliance for environmental friendliness
Reliable performance and compatibility with various electronic devices and circuits