Manufacturer Part Number
DDC143EH-7
Manufacturer
Diodes Incorporated
Introduction
Bipolar Junction Transistor (BJT) Array, Pre-Biased
Product Features and Performance
2 NPN transistors in a single package
Pre-biased for simplified circuit design
150mW power dissipation
50V collector-emitter breakdown voltage
100mA maximum collector current
500nA maximum collector cutoff current
300mV maximum collector-emitter saturation voltage
20 minimum DC current gain
250MHz transition frequency
7kOhms base and emitter-base resistors
Product Advantages
Compact surface mount package
Pre-biased for easy circuit implementation
Suitable for low-power, high-frequency applications
Key Technical Parameters
Power Dissipation: 150mW
Collector-Emitter Breakdown Voltage: 50V
Maximum Collector Current: 100mA
Collector Cutoff Current: 500nA
Collector-Emitter Saturation Voltage: 300mV
DC Current Gain: 20 (minimum)
Transition Frequency: 250MHz
Base Resistor: 4.7kOhms
Emitter-Base Resistor: 4.7kOhms
Quality and Safety Features
RoHS3 compliant
Compatibility
Compatible with surface mount applications
Application Areas
Low-power, high-frequency circuits
Amplifiers
Switches
Logic gates
Product Lifecycle
Currently in active production
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
Compact surface mount package
Pre-biased for simplified circuit design
Suitable for low-power, high-frequency applications
Meets RoHS3 compliance requirements
Widely compatible with surface mount applications