DDC144EU-7-F - Diodes Incorporated

Manufacturer Part Number

DDC144EU-7-F

Manufacturer

Diodes Incorporated

Introduction

Bipolar Junction Transistor (BJT) array with pre-biased dual NPN transistors

Product Features and Performance

Dual NPN transistors with pre-biasing

Low collector-emitter saturation voltage

High transition frequency of 250MHz

Collector current up to 100mA

Collector-emitter breakdown voltage up to 50V

Power dissipation up to 200mW

Product Advantages

Compact and space-saving design

Improved efficiency and performance

Suitable for various analog and digital applications

Key Technical Parameters

Package: 6-TSSOP, SC-88, SOT-363

Power Dissipation: 200mW

Collector-Emitter Breakdown Voltage: 50V

Collector Current: 100mA

Collector Cutoff Current: 500nA

Collector-Emitter Saturation Voltage: 300mV

DC Current Gain: 68

Transition Frequency: 250MHz

Base Resistor: 47kOhms

Emitter-Base Resistor: 47kOhms

Quality and Safety Features

RoHS3 compliant

Reliable surface mount packaging

Compatibility

Suitable for a wide range of analog and digital applications

Application Areas

Amplifiers

Switches

Logic circuits

Biasing circuits

Product Lifecycle

Currently available

No known discontinuation or replacement plans

Key Reasons to Choose This Product

High-performance dual NPN transistors with pre-biasing

Compact and space-saving design

Excellent electrical characteristics and high transition frequency

Suitable for a variety of analog and digital applications

Reliable and RoHS3 compliant packaging