Manufacturer Part Number
DDC114YU-7-F
Manufacturer
Diodes Incorporated
Introduction
Discrete semiconductor product
Bipolar Junction Transistor (BJT) array with pre-biased configuration
Product Features and Performance
Dual NPN pre-biased transistors
Optimized for high-speed switching applications
Frequency transition of 250MHz
Low collector-emitter saturation voltage of 300mV @ 5mA
Product Advantages
Compact surface mount SOT-363 package
Pre-biased configuration for easy circuit implementation
Excellent high-frequency performance
Key Technical Parameters
Power rating: 200mW
Collector-emitter breakdown voltage: 50V
Collector current: 100mA
Collector cutoff current: 500nA
DC current gain: 68 @ 10mA, 5V
Base resistor: 10kOhms
Emitter-base resistor: 47kOhms
Quality and Safety Features
RoHS3 compliant
Compatibility
Compatible with a variety of high-speed digital and analog applications
Application Areas
High-speed switching circuits
Logic gates
Amplifiers
Drivers
Product Lifecycle
Current product offering, no known discontinuation plans
Key Reasons to Choose This Product
Excellent high-frequency performance for high-speed applications
Pre-biased configuration simplifies circuit design
Compact surface mount package saves board space
Reliable RoHS3 compliant construction
Suitable for a wide range of digital and analog applications