DDC114TU-7-F - Diodes Incorporated

Manufacturer Part Number

DDC114TU-7-F

Manufacturer

Diodes Incorporated

Introduction

Diodes Incorporated's DDC114TU-7-F is a discrete semiconductor product, specifically a pre-biased bipolar junction transistor (BJT) array.

Product Features and Performance

Dual NPN pre-biased transistors

Optimized for switching and amplification applications

High frequency operation up to 250 MHz

Low collector-emitter saturation voltage of 300 mV at 1 mA collector current

Integrated 10 kOhm base resistors

Product Advantages

Space-saving 6-pin TSSOP package

Excellent high-frequency performance

Pre-biased for easy circuit integration

Robust design for reliable operation

Key Technical Parameters

Power rating: 200 mW

Collector-emitter breakdown voltage: 50 V

Collector current (max): 100 mA

Current gain (hFE): 100 min at 1 mA, 5 V

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering processes

Reliable performance in a variety of applications

Compatibility

The DDC114TU-7-F is compatible with a wide range of electronic circuits and systems that require high-frequency, pre-biased bipolar junction transistors.

Application Areas

Switching and amplification circuits

Audio and video signal processing

Telecommunications equipment

Industrial control and automation systems

Product Lifecycle

The DDC114TU-7-F is an active product from Diodes Incorporated, and there are no known plans for discontinuation or replacement at this time.

Key Reasons to Choose This Product

Excellent high-frequency performance up to 250 MHz

Pre-biased design for easy circuit integration

Compact 6-pin TSSOP package for space-saving designs

Robust and reliable operation with a power rating of 200 mW

RoHS3 compliance for use in a variety of applications