Manufacturer Part Number
BSS123WQ-7-F
Manufacturer
Diodes Incorporated
Introduction
Low Power N-Channel MOSFET Transistor
Product Features and Performance
100V Drain-Source Voltage
170mA Continuous Drain Current
6Ω Maximum On-Resistance
200mW Power Dissipation
60pF Input Capacitance
-55°C to 150°C Operating Temperature Range
Product Advantages
Suitable for low-power switching and amplifying applications
High breakdown voltage for increased circuit protection
Low on-resistance for efficient power transfer
Wide operating temperature range for versatile usage
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 6Ω @ 170mA, 10V
Continuous Drain Current (Id): 170mA
Input Capacitance (Ciss): 60pF @ 25V
Power Dissipation (Pd): 200mW
Quality and Safety Features
RoHS3 Compliant
Meets industry safety and reliability standards
Compatibility
Surface mount package (SOT-323)
Compatible with common PCB assembly processes
Application Areas
Low-power switching and amplifying circuits
Power management systems
General-purpose electronic devices
Product Lifecycle
Currently in active production
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
Reliable performance with high voltage and current capabilities
Efficient power handling due to low on-resistance
Wide operating temperature range for diverse applications
Compact surface mount package for space-constrained designs
Compliance with RoHS regulations for environmental responsibility