Manufacturer Part Number
BSS126H6327XTSA2
Manufacturer
Infineon Technologies
Introduction
High-voltage, N-channel enhancement-mode power MOSFET
Suitable for a wide range of power switching applications
Product Features and Performance
Wide drain-to-source voltage range up to 600V
Low on-resistance for low power losses
Fast switching speed
High input impedance
Depletion mode operation
Product Advantages
Excellent power efficiency
Reliable and robust performance
Compact and space-saving design
Suitable for a variety of power conversion applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Maximum Gate-to-Source Voltage (Vgs(max)): ±20V
On-Resistance (RDS(on)): 500Ω @ 16mA, 10V
Continuous Drain Current (ID): 21mA (Ta)
Input Capacitance (Ciss): 28pF @ 25V
Power Dissipation (Ptot): 500mW (Ta)
Threshold Voltage (Vgs(th)): 1.6V @ 8A
Quality and Safety Features
Compliant with RoHS 3 directive
Reliable and stable performance across a wide temperature range (-55°C to 150°C)
Compatibility
Suitable for a wide range of power switching applications, such as:
- Switch-mode power supplies
- Motor drives
- Lighting control
- High-voltage appliances
Application Areas
Power conversion and regulation
Motor control
Lighting control
High-voltage applications
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Excellent power efficiency and low power losses due to low on-resistance
Reliable and robust performance across a wide temperature range
Compact and space-saving design for easy integration into various applications
Suitable for a wide range of power switching applications, providing design flexibility
Compliant with RoHS 3 directive for environmentally-friendly and sustainable use
BSS126 H6327Cypress Semiconductor (Infineon Technologies)
BSS127G-AE2-RUTC