BSS123W-7-F - Diodes Incorporated

Manufacturer Part Number

BSS123W-7-F

Manufacturer

Diodes Incorporated

Introduction

Discrete semiconductor product

Single N-channel MOSFET transistor

Product Features and Performance

Drain-to-source voltage (Vdss) of 100V

Maximum gate-to-source voltage (Vgs) of ±20V

On-resistance (Rds(on)) of 6Ω at 170mA, 10V

Continuous drain current (Id) of 170mA at 25°C

Input capacitance (Ciss) of 60pF at 25V

Maximum power dissipation of 200mW at 25°C

Product Advantages

Low on-resistance

High voltage rating

Suitable for a variety of applications

Key Technical Parameters

MOSFET technology

N-channel FET type

Threshold voltage (Vgs(th)) of 2V at 1mA

Drive voltage range of 4.5V to 10V

Surface mount package (SOT-323)

Quality and Safety Features

RoHS3 compliant

Operating temperature range of -55°C to 150°C

Compatibility

Can be used in a wide range of electronic circuits and applications

Application Areas

Suitable for use in general-purpose switching, amplifying, and control applications

Product Lifecycle

Currently available product

No information on discontinuation or replacement

Key Reasons to Choose This Product

High voltage rating and low on-resistance make it suitable for a variety of power switching and control applications

Small surface mount package (SOT-323) allows for compact circuit designs

Wide operating temperature range increases versatility

RoHS3 compliance ensures environmental friendliness