Manufacturer Part Number
BSS123-7-F
Manufacturer
Diodes Incorporated
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20 V
Rds On (Max) @ Id, Vgs: 6 Ohm @ 170 mA, 10 V
Current Continuous Drain (Id) @ 25°C: 170 mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Power Dissipation (Max): 300 mW (Ta)
Vgs(th) (Max) @ Id: 2 V @ 1 mA
Drive Voltage (Max Rds On, Min Rds On): 10 V
Product Advantages
Wide operating temperature range (-55°C ~ 150°C)
Low on-resistance
Compact surface mount package (SOT-23-3)
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 compliant
Compatibility
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Manufacturer's packaging: SOT-23-3
Application Areas
Suitable for a variety of applications requiring a compact, high-performance N-Channel MOSFET transistor
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available, but details are not provided.
Several Key Reasons to Choose This Product
Wide operating temperature range
Low on-resistance for efficient power management
Compact surface mount package for space-constrained designs
RoHS3 compliance for use in environmentally-conscious applications