Manufacturer Part Number
BSS119NH6327XTSA1
Manufacturer
Infineon Technologies
Introduction
N-channel enhancement-mode power MOSFET
Part of the OptiMOS series
Product Features and Performance
High power density
Low on-resistance
Fast switching speed
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Efficient power conversion
Reliable operation
Compact design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Maximum Gate-to-Source Voltage (Vgs(max)): ±20V
On-Resistance (Rds(on)): 6Ω @ 190mA, 10V
Continuous Drain Current (Id): 190mA @ 25°C
Input Capacitance (Ciss): 20.9pF @ 25V
Power Dissipation (Ptot): 500mW @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for various safety-critical applications
Compatibility
Surface mount (PG-SOT23) package
Interchangeable with similar MOSFET devices
Application Areas
Power management circuits
Switching power supplies
Motor control
Automotive electronics
Product Lifecycle
Currently available
No discontinuation or replacement information available
Key Reasons to Choose This Product
Optimized performance-to-size ratio
Reliable and efficient operation
Versatile application capabilities
Compliance with industry safety standards