BSS123LT1G - onsemi

Manufacturer Part Number

BSS123LT1G

Manufacturer

onsemi

Introduction

N-channel MOSFET transistor in a SOT-23-3 (TO-236) package

Product Features and Performance

Drain-to-Source Voltage (Vdss) up to 100V

Gate-to-Source Voltage (Vgs) up to ±20V

Low On-Resistance (Rds(on)) of 6Ω @ 100mA, 10V

Continuous Drain Current (Id) of 170mA at 25°C

Input Capacitance (Ciss) of 20pF @ 25V

Power Dissipation up to 225mW at 25°C

Product Advantages

Excellent switching performance

High voltage handling capability

Compact SOT-23-3 (TO-236) surface mount package

Suitable for a wide range of applications

Key Technical Parameters

MOSFET Technology

N-Channel FET Type

Gate Threshold Voltage (Vgs(th)) of 2.6V @ 1mA

Operating Temperature Range of -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging

Compatibility

Suitable for use in a variety of electronic circuits and applications

Application Areas

Power management

Switching circuits

Amplifier circuits

Motor controls

General purpose switching

Product Lifecycle

This product is an active and currently available component

Replacement or upgrade options may be available

Several Key Reasons to Choose This Product

Excellent electrical performance with low on-resistance and high voltage handling

Compact and easy to integrate SOT-23-3 (TO-236) package

Wide operating temperature range

RoHS3 compliance for environmental responsibility

Suitable for a diverse range of electronic applications