Manufacturer Part Number
BCP5210TA
Manufacturer
Diodes Incorporated
Introduction
This is a PNP bipolar junction transistor (BJT) from Diodes Incorporated, designed for a variety of electronic applications.
Product Features and Performance
Operating temperature range: -65°C to 150°C
Power rating: 2W
Collector-emitter breakdown voltage: 60V
Collector current: 1A
Collector cutoff current: 100nA
Vce saturation voltage: 500mV @ 50mA, 500mA
DC current gain: 63 @ 150mA, 2V
Transition frequency: 150MHz
Product Advantages
Versatile PNP bipolar transistor suitable for various electronic circuit designs
Robust operating temperature range
High power handling capability
Low saturation voltage for efficient switching
Key Technical Parameters
Transistor type: PNP
Package: SOT-223-3
RoHS compliance: RoHS3 Compliant
Quality and Safety Features
Complies with RoHS3 environmental regulations
Manufactured in a quality-controlled environment
Compatibility
This transistor is compatible with a wide range of electronic circuit designs and can be used in various applications.
Application Areas
Switching circuits
Amplifier circuits
Power supply circuits
General-purpose electronics
Product Lifecycle
The BCP5210TA is an active and readily available product from Diodes Incorporated. Replacement or upgrade options may be available, but the current model remains in production.
Several Key Reasons to Choose This Product
Robust performance across a wide temperature range
Efficient switching characteristics with low saturation voltage
Versatile PNP bipolar transistor suitable for diverse applications
Compliance with RoHS3 environmental regulations
Availability and ongoing support from Diodes Incorporated