Manufacturer Part Number
BCP5116TA
Manufacturer
Diodes Incorporated
Introduction
High-performance PNP bipolar junction transistor (BJT)
Product Features and Performance
High current handling capability up to 1A
Wide operating voltage range up to 45V
High switching frequency up to 150MHz
Low collector-emitter saturation voltage
High current gain of at least 100 at 150mA, 2V
Product Advantages
Suitable for high-power audio amplifiers, switching regulators, and other high-current applications
Reliable performance in harsh environments with operating temperature range from -65°C to 150°C
Small surface mount package (SOT-223-3) for space-efficient designs
Key Technical Parameters
Power Rating: 2W
Collector-Emitter Breakdown Voltage: 45V
Collector Current (Max): 1A
Collector Cutoff Current: 100nA
Collector-Emitter Saturation Voltage: 500mV @ 50mA, 500mA
Current Gain: 100 (min) @ 150mA, 2V
Transition Frequency: 150MHz
Quality and Safety Features
RoHS3 compliant
Housed in a rugged SOT-223-3 package
Compatibility
Compatible with various electronic circuits and systems requiring a high-performance PNP bipolar junction transistor
Application Areas
Audio amplifiers
Switching regulators
Power supplies
General-purpose high-power electronics
Product Lifecycle
The BCP5116TA is an active and widely available product from Diodes Incorporated. No immediate discontinuation or replacement plans are known.
Key Reasons to Choose This Product
High current handling and voltage capability for demanding applications
Fast switching performance up to 150MHz for efficient circuit designs
Reliable operation in a wide temperature range from -65°C to 150°C
Small, space-saving surface mount package (SOT-223-3)
Compliance with RoHS3 environmental standards for restricted substances