Manufacturer Part Number
BCP51-16,115
Manufacturer
Nexperia
Introduction
The BCP51-16,115 is a PNP bipolar junction transistor (BJT) from Nexperia's discrete semiconductor product line.
Product Features and Performance
Automotive-grade AEC-Q100 qualified
Operating temperature up to 150°C
Power rating of 1 W
Collector-emitter breakdown voltage of 45 V
Collector current rating of 1 A
Low collector cutoff current of 100 nA
Saturation voltage of 500 mV @ 50 mA, 500 mA
Minimum DC current gain of 100 @ 150 mA, 2 V
Transition frequency of 145 MHz
Product Advantages
Robust design for automotive and industrial applications
High power handling and temperature capability
Low saturation voltage for efficient operation
Suitable for high-speed switching and amplification
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 45 V
Current Collector (Ic) (Max): 1 A
Current Collector Cutoff (Max): 100 nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500 mV @ 50 mA, 500 mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150 mA, 2 V
Frequency Transition: 145 MHz
Quality and Safety Features
ROHS3 compliant
AEC-Q100 automotive qualification
Compatibility
Surface mount package (SOT-223)
Suitable for tape and reel packaging
Application Areas
Automotive electronics
Industrial control systems
Power supply and amplifier circuits
Switching and driver applications
Product Lifecycle
This is an active product, not nearing discontinuation.
Replacement or upgrade options may be available from Nexperia.
Key Reasons to Choose This Product
Robust automotive-grade design
High power handling and temperature capability
Low saturation voltage for efficient operation
Suitable for high-speed switching and amplification
ROHS3 compliance and AEC-Q100 qualification for reliability
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