BCP52-16 - Infineon Technologies

Manufacturer Part Number

BCP52-16

Manufacturer

Infineon Technologies

Introduction

A high-performance PNP bipolar junction transistor (BJT) for general-purpose applications

Product Features and Performance

Capable of handling up to 1.4 watts of power

Supports collector-emitter breakdown voltages up to 60V

Maximum collector current of 1A

Low collector-emitter saturation voltage of 500mV @ 50mA, 500mA

High DC current gain of at least 100 @ 150mA, 2V

Transition frequency of 50MHz

Product Advantages

Compact surface-mount package (SOT-223) enables efficient board space utilization

Suitable for a wide range of applications due to its versatile performance capabilities

Reliable and robust design for consistent operation

Key Technical Parameters

Power Rating: 1.4W

Collector-Emitter Breakdown Voltage: 60V

Collector Current (Max): 1A

Collector Cutoff Current (Max): 100nA

DC Current Gain (Min): 100 @ 150mA, 2V

Transition Frequency: 50MHz

Quality and Safety Features

RoHS3 compliant for environmental responsibility

Robust SOT-223 package for reliable operation

Compatibility

Can be used as a replacement or upgrade for similar PNP bipolar transistors in various electronic circuits and applications

Application Areas

General-purpose electronic circuits

Power supply and amplifier designs

Switching and control applications

Product Lifecycle

Currently in production, with no plans for discontinuation known

Replacement or upgrade options available from Infineon and other manufacturers

Several Key Reasons to Choose This Product

Versatile performance capabilities to meet a wide range of design requirements

Compact and efficient surface-mount package for space-constrained applications

Reliable and robust design for consistent and long-lasting operation

RoHS3 compliance for environmentally responsible use

Availability of replacement and upgrade options for continued support