S34MS02G200BHI003 - Cypress Semiconductor

Manufacturer Part Number

S34MS02G200BHI003

Manufacturer

Infineon Technologies

Introduction

The Infineon S34MS02G200BHI003 is a high-capacity, high-performance NAND flash memory device. It offers a memory size of 2Gbit, organized in a 256M x 8 configuration, and supports a parallel memory interface. This product is suitable for a wide range of applications that require non-volatile storage with fast access and write speeds.

Product Features and Performance

2Gbit NAND flash memory

256M x 8 memory organization

Parallel memory interface

45ns write cycle time (word, page)

45ns access time

Operating voltage range of 1.7V to 1.95V

Operating temperature range of -40°C to 85°C

Product Advantages

High-density non-volatile storage

Fast read and write speeds

Wide operating voltage and temperature ranges

Reliable and durable NAND flash technology

Key Reasons to Choose This Product

Ideal for applications requiring large non-volatile storage capacity

Excellent performance characteristics for fast data access and transfer

Wide compatibility and suitability for a variety of electronic devices

Robust design and operation in challenging environmental conditions

Quality and Safety Features

Rigorous quality control and testing processes

Compliance with industry safety standards

Compatibility

The S34MS02G200BHI003 is designed to be compatible with a wide range of electronic devices and systems that require high-capacity, high-performance non-volatile memory.

Application Areas

Embedded systems

Industrial automation and control

Automotive electronics

Consumer electronics

Medical devices

Telecommunications equipment

Product Lifecycle

The S34MS02G200BHI003 has been discontinued at DiGi-Electronics. However, there may be equivalent or alternative models available from Infineon Technologies or other manufacturers. Customers are advised to contact our website's sales team for more information on available options.