Manufacturer Part Number
S34MS02G200TFI000
Manufacturer
Cypress Semiconductor
Introduction
High-density, high-performance NAND flash memory device
Suitable for a wide range of applications, including embedded systems, consumer electronics, and industrial applications
Product Features and Performance
2Gbit (256M x 8) NAND flash memory
Parallel memory interface
Fast access time of 45ns
Wide operating temperature range of -40°C to 85°C
Low power consumption with a supply voltage range of 1.7V to 1.95V
Supports page program, block erase, and read operations
Endurance of up to 100,000 program/erase cycles per block
Product Advantages
High storage capacity
Fast access and programming speeds
Wide operating temperature range
Low power consumption
Reliable and durable performance
Key Technical Parameters
Memory size: 2Gbit
Memory organization: 256M x 8
Access time: 45ns
Supply voltage: 1.7V to 1.95V
Operating temperature: -40°C to 85°C
Program/erase cycles: up to 100,000 per block
Quality and Safety Features
RoHS3 compliant
Meets industrial quality and reliability standards
Compatibility
Suitable for a wide range of embedded systems and consumer electronics applications
Application Areas
Embedded systems
Consumer electronics
Industrial applications
Product Lifecycle
This product is currently in production and readily available
No plans for discontinuation or upgrade in the near future
Key Reasons to Choose This Product
High storage capacity and fast performance
Wide operating temperature range and low power consumption
Reliable and durable design
Compatibility with a wide range of applications
Availability and ongoing support from the manufacturer
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