S34MS02G200TFI000 - Cypress Semiconductor Corp

Manufacturer Part Number

S34MS02G200TFI000

Manufacturer

Cypress Semiconductor

Introduction

High-density, high-performance NAND flash memory device

Suitable for a wide range of applications, including embedded systems, consumer electronics, and industrial applications

Product Features and Performance

2Gbit (256M x 8) NAND flash memory

Parallel memory interface

Fast access time of 45ns

Wide operating temperature range of -40°C to 85°C

Low power consumption with a supply voltage range of 1.7V to 1.95V

Supports page program, block erase, and read operations

Endurance of up to 100,000 program/erase cycles per block

Product Advantages

High storage capacity

Fast access and programming speeds

Wide operating temperature range

Low power consumption

Reliable and durable performance

Key Technical Parameters

Memory size: 2Gbit

Memory organization: 256M x 8

Access time: 45ns

Supply voltage: 1.7V to 1.95V

Operating temperature: -40°C to 85°C

Program/erase cycles: up to 100,000 per block

Quality and Safety Features

RoHS3 compliant

Meets industrial quality and reliability standards

Compatibility

Suitable for a wide range of embedded systems and consumer electronics applications

Application Areas

Embedded systems

Consumer electronics

Industrial applications

Product Lifecycle

This product is currently in production and readily available

No plans for discontinuation or upgrade in the near future

Key Reasons to Choose This Product

High storage capacity and fast performance

Wide operating temperature range and low power consumption

Reliable and durable design

Compatibility with a wide range of applications

Availability and ongoing support from the manufacturer