S34MS01G200TFI000 - Cypress Semiconductor Corp

Manufacturer Part Number

S34MS01G200TFI000

Manufacturer

Infineon Technologies

Introduction

This is a 1Gbit non-volatile NAND FLASH memory component suitable for a broad range of electronic applications requiring data storage.

Product Features and Performance

Memory Size: 1Gbit

Memory Format: FLASH - NAND

Memory Organization: 128M x 8

Memory Interface: Parallel

Technology: FLASH - NAND

Write Cycle Time - Word, Page: 45ns

Access Time: 45 ns

Product Advantages

High storage capacity for dense memory requirements

Parallel interface for increased data transfer rates

Robust -40°C ~ 85°C operating temperature range suitable for diverse environments

Key Technical Parameters

Voltage - Supply: 1.7V ~ 1.95V

Operating Temperature: -40°C ~ 85°C

Write Cycle Time - Word, Page: 45ns

Access Time: 45 ns

Memory Organization: 128M x 8

Quality and Safety Features

Operation across industrial temperature ranges

Strict compliance with manufacturing standards of Infineon Technologies

Designed for long-term reliability and stability

Compatibility

Compatible with systems requiring 48-TFSOP packaging

Surface Mount design to fit a broad range of board layouts

Application Areas

Consumer Electronics

Networking Equipment

Industrial Control Systems

Telecommunications

Automotive

Product Lifecycle

Active product status

Not currently nearing discontinuation

Support for upgrades or suitable replacements available

Several Key Reasons to Choose This Product

Large storage capacity for complex applications

Fast write and access times for high-speed operations

Industry-standard robustness and reliability

Comprehensive support and longevity assurances from Infineon Technologies

Suitable for a wide range of temperature and environmental conditions

Designed to meet diverse application needs within the specified categories