Manufacturer Part Number
SPB03N60C3
Manufacturer
Infineon Technologies
Introduction
The SPB03N60C3 is a high-performance N-Channel MOSFET transistor from Infineon Technologies, designed for a wide range of power conversion and switching applications.
Product Features and Performance
600V Drain-Source Voltage Capability
4Ω Maximum On-Resistance at 2A, 10V Gate-Source Voltage
2A Continuous Drain Current at 25°C
400pF Maximum Input Capacitance at 25V Drain-Source Voltage
17nC Maximum Gate Charge at 10V Gate-Source Voltage
-55°C to 150°C Operating Temperature Range
Product Advantages
Excellent power conversion efficiency due to low on-resistance
High voltage handling capability
Compact TO-263 package with low thermal resistance
Robust and reliable performance across wide temperature range
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 1.4Ω @ 2A, 10V
Continuous Drain Current (Id): 3.2A @ 25°C
Input Capacitance (Ciss): 400pF @ 25V
Power Dissipation (Pd): 38W @ Tc
Quality and Safety Features
RoHS3 Compliant
Meets stringent quality and reliability standards
Compatibility
Suitable for a wide range of power conversion and switching applications, including power supplies, motor drives, and industrial electronics.
Application Areas
Power supplies
Motor drives
Industrial electronics
Inverters
Switched-mode power supplies
Product Lifecycle
This product is an active and widely available part from Infineon Technologies.
Replacements and upgrades may be available in the future as technology progresses.
Key Reasons to Choose This Product
Excellent power conversion efficiency due to low on-resistance
High voltage handling capability up to 600V
Compact and thermally efficient TO-263 package
Reliable performance across wide temperature range of -55°C to 150°C
RoHS3 compliance for use in environmentally-conscious applications